| 摘要 |
<p>One embodiment of the present invention is a substrate with a partition wall pattern, the partition wall pattern formed on a predetermined position of the substrate, the partition wall pattern having a material including a fluorine compound, wherein a ratio of a detected intensity of a fragment ion of F- (M/Z=19) to total detected intensity of all minus ions is 25%-60% in the case where analysis of minus ions of an upper surface of the partition wall is performed using a time-of-flight secondary ion mass spectrometry (TOF-SIMS).</p> |
