| 发明名称 |
METHODS OF MAKING AN INTERPOSER STRUCTURE WITH EMBEDDED CAPACITOR STRUCTURE |
| 摘要 |
A device is disclosed which includes an interposer, at least one capacitor formed at least partially within an opening formed in the interposer and an integrated circuit that is operatively coupled to the interposer. A method is disclosed which includes obtaining an interposer having at least one capacitor formed at least partially within an opening in the interposer and operatively coupling an integrated circuit to the interposer. A method is also disclosed which includes obtaining an interposer comprising a dielectric material, forming an opening in the interposer and forming a capacitor that is positioned at least partially within the opening. |
| 申请公布号 |
US2014162412(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201414180567 |
申请日期 |
2014.02.14 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
Chong Chin Hui;Corisis David J.;Lee Choon Kuan |
| 分类号 |
H01L21/48;H01L49/02;H01L23/00 |
主分类号 |
H01L21/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a capacitor in an interposer, comprising:
forming an opening extending through a thickness of the interposer; and forming a capacitor at least partially within the opening by: forming a first insulator; forming a first conductive structure around the first insulator; forming a second insulator around the first conductive structure; and forming a second conductive structure extending around the second insulator.
|
| 地址 |
BOISE ID US |
