发明名称 Zn-Si-O-BASED OXIDE SINTERED BODY, METHOD FOR PRODUCING THE SAME, AND TRANSPARENT CONDUCTIVE FILM
摘要 [Object] Provided are: a Zn—Si—O-based oxide sintered body, which suppresses abnormal discharge and so forth when used as a sputtering target, or suppresses a splash phenomenon when used as a tablet for vapor deposition; a method for producing the Zn—Si—O-based oxide sintered body; and the like.;[Solution] The Zn—Si—O-based oxide sintered body contains zinc oxide as a main component and Si, and is characterized in that a Si content is 0.1 to 10 atomic % with an atomic ratio of Si/(Zn+Si), the Si element is contained in a wurtzite-type zinc oxide phase to form a solid solution, and the oxide sintered body does not contain a SiO2 phase and zinc silicate (Zn2SiO4) as a spinel-type composite oxide phase. In producing the sintered body by pressing a granulated powder obtained from a ZnO powder and SiO2 powder, which are raw material powders, and sintering the compact, the method for producing the sintered body is characterized by including the steps of: raising a temperature in a sintering furnace in a temperature range from 700 to 900° C. at a rate of temperature rise of 5° C./minute or more; and sintering the compact from 900° C. to 1400° C. in the sintering furnace.
申请公布号 US2014158951(A1) 申请公布日期 2014.06.12
申请号 US201214237431 申请日期 2012.07.03
申请人 Yamanobe Yasunori;Sogabe Kentaro;Ozawa Makoto 发明人 Yamanobe Yasunori;Sogabe Kentaro;Ozawa Makoto
分类号 H01B1/08;C30B1/02;C23C14/34;H01J37/34 主分类号 H01B1/08
代理机构 代理人
主权项 1. A Zn—Si—O-based oxide sintered body containing zinc oxide as a main component and Si, characterized in that a Si content is 0.1 to 10 atomic % with an atomic ratio of Si/(Zn+Si), the Si element is contained in a wurtzite-type zinc oxide phase to form a solid solution, and the oxide sintered body does not contain a SiO2 phase and zinc silicate (Zn2SiO4) as a spinel-type composite oxide phase.
地址 Tokyo JP