发明名称 |
Zn-Si-O-BASED OXIDE SINTERED BODY, METHOD FOR PRODUCING THE SAME, AND TRANSPARENT CONDUCTIVE FILM |
摘要 |
[Object] Provided are: a Zn—Si—O-based oxide sintered body, which suppresses abnormal discharge and so forth when used as a sputtering target, or suppresses a splash phenomenon when used as a tablet for vapor deposition; a method for producing the Zn—Si—O-based oxide sintered body; and the like.;[Solution] The Zn—Si—O-based oxide sintered body contains zinc oxide as a main component and Si, and is characterized in that a Si content is 0.1 to 10 atomic % with an atomic ratio of Si/(Zn+Si), the Si element is contained in a wurtzite-type zinc oxide phase to form a solid solution, and the oxide sintered body does not contain a SiO2 phase and zinc silicate (Zn2SiO4) as a spinel-type composite oxide phase. In producing the sintered body by pressing a granulated powder obtained from a ZnO powder and SiO2 powder, which are raw material powders, and sintering the compact, the method for producing the sintered body is characterized by including the steps of: raising a temperature in a sintering furnace in a temperature range from 700 to 900° C. at a rate of temperature rise of 5° C./minute or more; and sintering the compact from 900° C. to 1400° C. in the sintering furnace. |
申请公布号 |
US2014158951(A1) |
申请公布日期 |
2014.06.12 |
申请号 |
US201214237431 |
申请日期 |
2012.07.03 |
申请人 |
Yamanobe Yasunori;Sogabe Kentaro;Ozawa Makoto |
发明人 |
Yamanobe Yasunori;Sogabe Kentaro;Ozawa Makoto |
分类号 |
H01B1/08;C30B1/02;C23C14/34;H01J37/34 |
主分类号 |
H01B1/08 |
代理机构 |
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代理人 |
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主权项 |
1. A Zn—Si—O-based oxide sintered body containing zinc oxide as a main component and Si, characterized in that
a Si content is 0.1 to 10 atomic % with an atomic ratio of Si/(Zn+Si), the Si element is contained in a wurtzite-type zinc oxide phase to form a solid solution, and the oxide sintered body does not contain a SiO2 phase and zinc silicate (Zn2SiO4) as a spinel-type composite oxide phase.
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地址 |
Tokyo JP |