发明名称 |
MEMORY REPAIRING METHOD, AND MEMORY CONTROLLER AND MEMORY STORAGE APPARATUS USING THE SAME |
摘要 |
A memory repairing method for a rewritable non-volatile memory module and a memory controller and a memory storage apparatus are provided. The method includes monitoring a wear degree of the rewritable non-volatile memory module; determining whether the wear degree of the rewritable non-volatile memory module is larger than a threshold; and heating the rewritable non-volatile memory module such that the temperature of the rewritable non-volatile memory module lies in between 100° C.˜600° C. if the wear degree of the rewritable non-volatile memory module is larger than the threshold. Accordingly, deteriorated memory cells in the rewritable non-volatile memory module can be repaired, thereby preventing data loss. |
申请公布号 |
US2014160844(A1) |
申请公布日期 |
2014.06.12 |
申请号 |
US201313778055 |
申请日期 |
2013.02.26 |
申请人 |
PHISON ELECTRONICS CORP. |
发明人 |
Lin Wei;Hsu Yu-Cheng;Cheng Kuo-Yi;Chang Chun-Yen |
分类号 |
G11C29/04;G11C16/14 |
主分类号 |
G11C29/04 |
代理机构 |
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代理人 |
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主权项 |
1. A memory repairing method for a rewritable non-volatile memory module, the memory repairing method comprising:
monitoring a wear degree of at least a portion of a rewritable non-volatile memory module; and heating the at least a portion of the rewritable non-volatile memory module when the wear degree of the at least a portion of the rewritable non-volatile memory module is larger than a threshold.
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地址 |
Miaoli TW |