发明名称 MEMORY REPAIRING METHOD, AND MEMORY CONTROLLER AND MEMORY STORAGE APPARATUS USING THE SAME
摘要 A memory repairing method for a rewritable non-volatile memory module and a memory controller and a memory storage apparatus are provided. The method includes monitoring a wear degree of the rewritable non-volatile memory module; determining whether the wear degree of the rewritable non-volatile memory module is larger than a threshold; and heating the rewritable non-volatile memory module such that the temperature of the rewritable non-volatile memory module lies in between 100° C.˜600° C. if the wear degree of the rewritable non-volatile memory module is larger than the threshold. Accordingly, deteriorated memory cells in the rewritable non-volatile memory module can be repaired, thereby preventing data loss.
申请公布号 US2014160844(A1) 申请公布日期 2014.06.12
申请号 US201313778055 申请日期 2013.02.26
申请人 PHISON ELECTRONICS CORP. 发明人 Lin Wei;Hsu Yu-Cheng;Cheng Kuo-Yi;Chang Chun-Yen
分类号 G11C29/04;G11C16/14 主分类号 G11C29/04
代理机构 代理人
主权项 1. A memory repairing method for a rewritable non-volatile memory module, the memory repairing method comprising: monitoring a wear degree of at least a portion of a rewritable non-volatile memory module; and heating the at least a portion of the rewritable non-volatile memory module when the wear degree of the at least a portion of the rewritable non-volatile memory module is larger than a threshold.
地址 Miaoli TW