SUBSTRATE TREATMENT DEVICE, SUBSTRATE TREATMENT METHOD, SEMICONDUCTOR-DEVICE MANUFACTURING METHOD, AND CONTROL PROGRAM

摘要

Provided are a substrate treatment device, substrate treatment method, semiconductor-device manufacturing method, and control program whereby the thickness uniformity of a film formed on a substrate can be controlled. Said substrate treatment device is provided with the following: a treatment chamber into which a substrate is conveyed; a heating device that heats said substrate from the outside edge thereof inside the treatment chamber; a cooling device that cools the substrate from the outside edge thereof inside the treatment chamber; a treatment-gas supply unit that supplies a treatment gas to the treatment chamber; and a control unit that controls the heating device and cooling device so as to create a temperature difference between the middle of the substrate and the outside edge thereof and also controls the treatment-gas supply unit. When operating the treatment-gas supply unit so as to supply the treatment gas to the treatment chamber, the control unit stops the operation of the cooling device.