发明名称 Reduced power consumption phase change memory
摘要 <p>A phase change material layer (205) for reduced power consumption is provided. A first portion (206) of the phase change material layer includes the programmable volume (202) of the phase change material layer and its crystalline state has a higher resistivity than that of the crystalline state of a second portion (207) of the phase change material layer.</p>
申请公布号 EP2383811(B9) 申请公布日期 2014.06.11
申请号 EP20110175411 申请日期 2007.03.14
申请人 MICRON TECHNOLOGY, INC. 发明人 LIU, JUN
分类号 H01L45/00 主分类号 H01L45/00
代理机构 代理人
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