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1. A semiconductor device, comprising:
a plurality of asynchronous internal voltage generating circuits sharing an external voltage and generating internal voltages having different levels from one another by comparing the internal voltages and respective reference voltages, each of which has fixed level, wherein at least one asynchronous internal voltage generating circuit of the plurality of asynchronous internal voltage generating circuits makes the internal voltage have a predetermined target level using the external voltage regardless of the voltage level of the internal voltage compared to that of the respective reference voltage for a predetermined period, wherein the plurality of asynchronous internal voltage generating circuits comprises: a first asynchronous internal voltage generating circuit suitable for generating a first internal voltage; and a plurality of second asynchronous internal voltage generating circuits suitable for generating a second internal voltage, and wherein each of the plurality of second asynchronous internal voltage generating circuits comprises: the initial overdrive control unit suitable for receiving an activation signal which operates the second asynchronous internal voltage generating circuit, and generates an initial overdrive signal in response to the activation signal; and an internal voltage generating circuit generating the second internal voltage having the level higher than a second internal voltage target level by initially operating using the external voltage according to the initial overdrive signal.
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