发明名称 Method and apparatus for super radiant laser action in half wavelength thick organic semiconductor microcavities
摘要 The disclosed device is a solid state organic semiconductor VCSEL in which the microcavity is composed of metal and dielectric mirrors and the gain layer is only λ/2n thick. The gain layer comprises a thermally evaporated 156.7 nm thick film of the laser dye DCM doped (2.5% v/v) into an Alq3 host matrix. The microcavity consists of 2 mirrors, a dielectric Bragg reflector (DBR) sputter-coated onto a quartz substrate as the mirror through which the organic gain layer is optically excited and laser emission is collected and a silver mirror that is thermally evaporated on top of the Alq3:DCM film. The device exhibits laser action from the DCM both when the DCM molecules are excited directly at 535 nm and via Förster Resonance Energy Transfer (FRET) from the Alq3 (excited at 404 nm) with laser thresholds of 4.9 μJ/cm2 and 14.2 μJ/cm2 respectively.
申请公布号 US8748219(B2) 申请公布日期 2014.06.10
申请号 US200913061950 申请日期 2009.09.08
申请人 Massachusetts Institute of Technology 发明人 Tischler Jonathan R.;Young Elizabeth R.;Nocera Daniel G.;Bulovic Vladimir
分类号 H01L51/40 主分类号 H01L51/40
代理机构 代理人
主权项 1. A method for forming a microcavity lasing device, the method comprising: depositing a dielectric Bragg reflector (“DBR”) layer over a polished quartz substrate; thermally evaporating an organic gain layer having Alq3 doped with the laser dye DCM 2.8%, the dye DCM of the organic gain layer being substantially a monolayer thick; and forming a silver mirror layer by thermal evaporation over the organic gain layer;wherein the organic gain layer having a thickness determined by the relationship λ/2n, where λ is the excitation energy and n is the refractive index of the organic pain layer.
地址 Cambridge MA US