| 摘要 |
<p>Disclosed is a method for fabricating a semiconductor device. A landing pad is formed. A stopping insulating layer is formed on the landing pad. A lower molding layer including a first material is formed on the stopping insulating layer. An upper molding layer including a second material, which is different from the first material, is formed on the lower molding layer. A hole is formed vertically through the upper and lower molding layers to expose the landing pad. A first electrode is formed in the hole. The upper molding layer is removed to expose a portion of a surface of the first electrode. The lower molding layer is removed to expose another portion of the surface of the first electrode. A dielectric layer is formed on the exposed portions of the surface of the first electrode. A second electrode is formed on the dielectric material.</p> |
