| 摘要 |
PROBLEM TO BE SOLVED: To obtain a wiring structure manufacturing method which can remove residual caused by ion milling while suppressing manufacturing cost.SOLUTION: A wiring structure manufacturing method comprises: forming a lower side metal layer 2 on a GaN substrate 1; forming on the lower side metal layer 2, a photoresist 4 having an opening 3 for exposing a part of the lower side metal layer 2; forming an upper side metal layer 5 on the lower side metal layer 2 in the opening 3 of the photoresist 4; selectively etching the photoresist 4 with respect to the upper side metal layer 5 to thin the photoresist 4; sputtering the thinned photoresist 4 by first ion milling and adhering the thinned photoresist to sidewalls of the upper side metal layer 5 to form a cover film 16; removing after forming the cover film 16, the lower side metal layer 2 existing on the GaN substrate 1 except under the upper side metal layer 5 by second ion milling using the upper side metal layer 5 as a mask; and removing the cover film 16 by an etchant after the second ion milling. |
