MANUFACTURING METHOD OF N-TYPE MOSFET

摘要

A manufacturing method of N-type MOSFET comprises: defining an active region of N-type MOSFET in a semiconductor substrate (101); forming an interfacial oxide layer (103) on the surface of the semiconductor substrate (101); forming a high-k gate dielectric layer (104) on the interfacial oxide layer (103); forming a metal gate layer (105) on the high-K gate dielectric layer (104); implanting doped ions in the metal gate layer (105); forming a polysilicon layer (109) on the metal gate layer (105); patterning the polysilicon layer (109), the metal gate layer (105), the high-K gate dielectric layer (104) and the interfacial oxide layer (103) into a gate stack, forming a sidewall spacer (110) of the gate around the gate stack; and forming a source / drain region (111). With the source / drain degradation, stacking the doped ions of the metal gate at the interface, generating the electric dipoles with appropriate polarity, and then respectively achieving the adjustment of gate electrodes effective work function of N-type MOSFET.