NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND METHOD FOR MANUFACTURING SAME

摘要

An object of the present invention is to provide a nitride semiconductor light-emitting device in which contact resistance generated between an n-contact layer and an n-side electrode is effectively reduced while maintaining satisfactory external quantum efficiency, and a method of efficiently producing the nitride semiconductor light-emitting device. Specifically, the present invention characteristically provides a nitride semiconductor light-emitting device having a semiconductor laminated body including an n-type laminate, a light-emitting layer and a p-type laminate, and an n-side electrode and a p-side electrode, characterized in that : the n-type laminate includes an n-contact layer made of an Al x Ga 1-x N material (0.7‰¤x‰¤1.0) and an n-clad layer provided on the n-contact layer; and an interlayer made of an Al y Ga 1-y N material (0‰¤y‰¤0.5) is provided on a partially exposed portion, on the light-emitting layer side, of the n-contact layer.