Semiconductor device

摘要

In a semiconductor device having a semiconductor substrate on which a diode and an IGBT are formed, a cathode region of the diode and a collector region of the IGBT are formed in a range exposed to one surface of the semiconductor substrate. On the surface, a first conductor layer that is in contact with the cathode region, and a second conductor layer that is in contact with the collector region are formed. The work function of the second conductor layer is larger than the work function of the first conductor layer.

主权项

1. A semiconductor device comprising:
a semiconductor substrate comprising:
a drift layer on a buffer layer,a diode region having a cathode region, andan IGBT region having a collector region, wherein the cathode region and collector region are formed under the buffer layer, and wherein the drift layer, the buffer layer, the cathode region and the collector region each comprises different dopant concentrations relative to each other; wherein a first conductor layer is in contact with the cathode region, and wherein a second conductor layer is in contact with the collector region is formed on the surface of the semiconductor substrate, and a work function of the second conductor layer is larger than a work function of the first conductor layer.