发明名称 Low temperature co-fired ceramic structure for high frequency applications and process for making same
摘要 Disclosed herein is a multilayer low temperature co-fired ceramic (LTCC) structure comprising a multilayer low temperature co-fired ceramic comprising glass-ceramic dielectric layers with screen printed thick film inner conductors on portions of the layers and with thin film outer conductors deposited on the upper and lower outer surfaces of the LTCC. At least a portion of the thin film outer conductors is patterned in the form of lines and the spacings between the lines are less then 50 μm. Also disclosed is a process for making the LTCC structure.
申请公布号 US8742262(B2) 申请公布日期 2014.06.03
申请号 US201213483837 申请日期 2012.05.30
申请人 E I du Pont de Nemours and Company 发明人 Gordon Scott E.;Hughes Elizabeth D.;Malerbi Joao Carlos;Nair Deepukumar M.;Nair Kumaran Manikantan;Parisi James M.;Smith Michael Arnett;Souders Ken E.
分类号 H05K1/09;H05K1/00;H05K1/03;H05K3/02;B05D5/12 主分类号 H05K1/09
代理机构 代理人
主权项 1. A multilayer low temperature co-fired ceramic structure comprising: a) a multilayer low temperature co-fired ceramic comprising glass-ceramic dielectric layers with screen printed thick film inner conductors on portions of said layers and with screen printed thick film via interconnects between said inner conductors and from said inner conductors to the upper and lower outer surfaces of said low temperature co-fired ceramic, wherein the upper and lower outer surfaces of said low temperature co-fired ceramic have been polished subsequent to firing; and b) thin film outer conductors deposited on said polished upper and lower outer surfaces of said low temperature co-fired ceramic, wherein said thin film outer conductors are patterned such that at least a portion of said thin film outer conductors is in the form of lines and wherein the spacings between said lines are less then 50 μm;said thick film inner conductors and said thick film via interconnects between said inner conductors, said thin film outer conductors, and said thick film via interconnects from said inner conductors to said upper and lower outer surfaces all comprising precious metals independently selected from a group consisting of gold, silver, platinum, palladium, mixtures thereof and alloys thereof and wherein said thick film via interconnects from said inner conductors to said upper and lower outer surfaces provide electrical connections to said thin film outer conductors.
地址 Wilmington DE US