| 摘要 |
A method and structure are provided to enable wire bond connections over active and/or passive devices and/or low-k dielectrics, formed on an Integrated Circuit die. A semiconductor substrate having active and/or passive devices is provided, with interconnect metallization formed over the active and/or passive devices. A passivation layer formed over the interconnect metallization is provided, wherein openings are formed in the passivation layer to an upper metal layer of the interconnect metallization. Compliant metal bond pads are formed over the passivation layer, wherein the compliant metal bond pads are connected through the openings to the upper metal layer, and wherein the compliant metal bond pads are formed substantially over the active and/or passive devices. The compliant metal bond pads may be formed of a composite metal structure. |
| 主权项 |
1. A circuit component comprising:
a semiconductor substrate; a dielectric layer having a dielectric constant less than 3.0 coupled to said semiconductor substrate; a first conductive pad coupled to said dielectric layer; a passivation layer coupled to said dielectric layer, wherein an opening in said passivation layer exposes a contact point of said first conductive pad, wherein said passivation layer comprises a nitride; a polymer layer on said passivation layer and coupled to said dielectric layer, wherein said polymer layer has a thickness greater than 2 micrometers; a second conductive pad coupled to said dielectric layer, wherein said second conductive pad is coupled to said contact point through said opening, in which said polymer layer and said passivation layer are selectively disposed to expose contact portions of said first conductive pad, wherein said second conductive pad is coupled to said first conductive pad through said contact portions, wherein said second conductive pad comprises a glue layer, a copper-containing seed layer coupled to said glue layer, an electroplated copper layer having a thickness greater than 1 micrometer on said copper-containing seed layer, a nickel layer having a thickness greater than 0.5 micrometers on said electroplated copper layer, and a wirebondable conductive layer coupled to said nickel layer; and a wirebond bonded to said second conductive pad, wherein a contact between said wirebond and said second conductive pad is coupled to at least a portion of said dielectric layer.
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