发明名称 Method of fabricating an integrated circuit without ground contact pad
摘要 The disclosure relates to a method of fabricating an integrated circuit of CMOS technology in a semiconductor wafer comprising scribe lines. According to the disclosure, a ground contact pad of the integrated circuit is made in a scribe line of the wafer and is destroyed during a step of individualizing the integrated circuit by singulation of the wafer. A ground contact of the integrated circuit is made on the back side of the integrated circuit when it is assembled in an interconnection package.
申请公布号 US8741742(B2) 申请公布日期 2014.06.03
申请号 US201213492504 申请日期 2012.06.08
申请人 STMicroelectronics (Rousset) SAS 发明人 Tailliet François
分类号 H01L21/00;H01L21/66 主分类号 H01L21/00
代理机构 代理人
主权项 1. A method of fabricating an electronic device, comprising: fabricating an integrated circuit, the fabricating including: forming scribe lines in a semiconductor wafer,embedding a circuit region in a substrate of the wafer,making, on a front side of the wafer, a ground contact pad of the integrated circuit that is electrically linked to the circuit region and to the substrate, wherein the ground contact pad of the integrated circuit is made in one of the scribe lines of the wafer, andindividualizing the integrated circuit by singulating the wafer in the scribe lines and destroying the ground contact pad; and assembling the integrated circuit in a package that includes a ground plane and interconnection leads, the assembling including electrically contacting a back side of the integrated circuit with a ground interconnection lead of the package and thereby replacing the ground contact pad destroyed during individualizing the integrated circuit.
地址 Rousset FR