| 摘要 |
PURPOSE: A method for manufacturing silicon with high doped hydrogen, the silicon with the high doped hydrogen manufactured by the same, and a method for growing a silicon ingot are provided to precisely control the amount of hydrogen injected to melt according to the total amount of the melt. CONSTITUTION: Silicon (5) is injected to a furnace (1). The inner gas of a hydrogen tub (4) is supplied to the furnace with high pressure through a compressor (3). The furnace is formed with a high temperature atmosphere and hydrogen gases with high pressure. The silicon is highly doped with the hydrogen gases. The silicon is polysilicon, a single crystalline silicon wafer, and negative single crystalline or polycrystalline silicon. [Reference numerals] (3) Compressor |
