FABRICATION METHOD OF ORGANIC THIN-FILM TRANSISTOR USING RADIATION-BASED GRAPHENE ELECTRODE WITH HIGH-WORK FUNCTION AND THE ORGANIC THIN-FILM TRANSISTOR THEREBY

摘要

The present invention provides a method for manufacturing an organic thin-film transistor using a radiation-based graphene electrode with a high work function. The method comprises: a first step of forming a pattern of a polymer film by selectively irradiating an upper part of a substrate; a second step of forming a source-drain graphene electrode by carbonizing the pattern formed in the first step; a third step of forming an organic semiconductor layer on an upper part of the source-drain graphene electrode formed in the second step; a fourth step of forming an organic insulating layer on an upper part of the organic semiconductor layer formed in the third step; and a fifth step of forming a gate electrode on an upper part of the organic insulating layer formed in the fourth step. The method for manufacturing an organic thin-film transistor according to the present invention can easily manufacture a high conductivity graphene electrode with a high work function in various forms (shapes and sizes) at much lower manufacturing costs without requiring an additional etching process, unlike an existing chemical vapor deposition using a metal catalyst, and can give performance equal or superior to that of an organic thin-film transistor using an expensive metal electrode (gold, platinum, etc.) as a source-drain electrode.