METHOD FOR MANUFACTURING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING SOLID STATE IMAGE SENSOR

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor epitaxial wafer capable of suppressing metal pollution by exerting higher gettering capability.SOLUTION: A method for manufacturing a semiconductor epitaxial wafer comprises: a first step for forming a modified layer 18 in which carbon and a dopant element as elements composing a cluster ion 16, are solidly solved therein, on a surface 10A of the semiconductor wafer, by irradiating the cluster ion 16 to the surface 10A of the semiconductor wafer 10; and a second step for forming an epitaxial layer 20 having a dopant element concentration being lower than a peak concentration of the dopant element in the modified layer 18, on the modified layer 18 of the semiconductor wafer.