发明名称 |
Ausbilden eines randlosen Kontakts für Transistoren in einem Ersatzmetall-Gate-Prozess |
摘要 |
<p>Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes creating an opening inside a dielectric layer, the dielectric layer being formed on top of a substrate and the opening exposing a channel region of a transistor in the substrate; depositing a work-function layer lining the opening and covering the channel region; forming a gate conductor covering a first portion of the work-function layer, the first portion of the work-function layer being on top of the channel region; and removing a second portion of the work-function layer, the second portion of the work-function layer surrounding the first portion of the work-function layer, wherein the removal of the second portion of the work-function layer insulates the first portion of the work-function layer from rest of the work-function layer.</p> |
申请公布号 |
DE112012000850(T8) |
申请公布日期 |
2014.05.28 |
申请号 |
DE20121100850T |
申请日期 |
2012.01.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
PONOTH, SHOM;HORAK, DAVID V.;KOBURGER III, CHARLES W.;YANG, CHIH-CHAO |
分类号 |
H01L21/336;H01L21/31;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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