A INSULATED GATE BIPOLAR TRANSISTOR

摘要

A horizontal insulated gate bipolar transistor according to an embodiment of the present invention comprises: a first conductive semiconductor substrate; a second conductive drift region formed on the upper part of the first conductive semiconductor substrate; a gate electrode arranged on the first conductive semiconductor substrate; a first emitter electrode which is spaced apart from the gate electrode and is arranged on the first conductive semiconductor substrate to be adjacent to one side surface of the gate electrode; a collector electrode which is spaced apart from the gate electrode and is arranged on a second conductive semiconductor substrate to be adjacent to the other side surface of the gate electrode; a second emitter electrode arranged between the gate electrode and the collector electrode; and a trench insulation film formed between the second emitter electrode and the collector electrode in the second conductive drift region.