THE SiC WAVEGUIDE MODULATOR

摘要

The invention is assigned to microwave devices and it is applied to modulate a phase of a propagating electromagnetic (EM) mode. The invention may be particularly relevant if the microwave device is used in the aggressive medium, such as high temperature, high acidity and strong ionizing radiation conditions. The SiC waveguide modulator consists of 6 major components – the metal cylindrical waveguides (1), one of that is designed for an excitation of the main mode of SiC waveguide and other one is intended to receive and transmit a modulated wave along a total waveguide system, the metal contacts (2); the direct current source (3); the SiC waveguide (4). The SiC cylindrical waveguide (4) is excited by placing it inside a metal waveguide (1). Dimensions of the SiC waveguide is chosen thus that the main wave only can propagate on the waveguide. The current flows on SiC waveguide tube walls therefore the waveguide material can be heating from some initial operating temperature till the final operating temperature, which may be 1800 °C. The waveguide material temperature is changed by voltage impulses between the metal contacts. The material permittivity also is changed with changing of the temperature and the phase shift of waveguide main mode also is altered. There is a longitudinal channel (5) inside of SiC waveguide that is filled with refrigerant and is connected to a cooling system (6) for a fast freezing of the SiC waveguide till an initial temperature and in this way, increasing the speed of the device operation.