发明名称 |
INSULATED GATE BIPOLAR TRANSISTOR |
摘要 |
There is provided an insulated gate bipolar transistor including: a first semiconductor area of a first conductivity type; a second semiconductor area of a second conductivity type formed on one surface of the first semiconductor area; third semiconductor areas of the first conductivity type continuously formed in a length direction on one surface of the second semiconductor area; a plurality of trenches formed between the third semiconductor areas, extending to an inside of the second semiconductor area, and being continuous in the length direction; a fourth semiconductor area of the second conductivity type formed on one surface of the third semiconductor areas, insulation layers formed inside the trenches; gate electrodes buried inside the insulation layers; and a barrier layer formed in at least one of locations corresponding to the third semiconductor areas inside the second semiconductor area. |
申请公布号 |
US2014138736(A1) |
申请公布日期 |
2014.05.22 |
申请号 |
US201313751916 |
申请日期 |
2013.01.28 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
PARK JAEHOON;JANG CHANG SU;SONG IN HYUK;UM KEE JU;SEO DONG SOO |
分类号 |
H01L29/739 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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