| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive resist composition that forms a resist pattern in which defect is suppressed, with good lithography characteristics, and to provide a resist pattern forming method.SOLUTION: The positive resist composition includes: a base component (A) which exhibits increased solubility in an alkali developer by the action of an acid; an acid generator component (B) which generates an acid upon exposure; and an additive component (C) comprising a fluorine-containing copolymer having a constitutional unit (c1) represented by general formula (c1-1) and a constitutional unit (c2) represented by general formula (c2-1), wherein the constitutional unit (c2) occupies 20-60 mol%. |
