| 发明名称 |
Flexible ferroelectric memory device and manufacturing method for the same |
| 摘要 |
The present disclosure relates to a flexible nonvolatile ferroelectric memory device, a 1T-1R (1Transistor-1Resistor) flexible ferroelectric memory device, and a manufacturing method for the same. |
| 申请公布号 |
US8729614(B2) |
申请公布日期 |
2014.05.20 |
| 申请号 |
US201113115268 |
申请日期 |
2011.05.25 |
| 申请人 |
AHN JONG-HYUN;RHO JONGHYUN;SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION |
发明人 |
AHN JONG-HYUN;RHO JONGHYUN |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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