| 摘要 |
<p>The present invention relates to a phase change memory device and a manufacturing method thereof. The phase change memory device comprises memory cells provided to intersecting points between word lines extended in a first direction and bit lines extended in a second direction crossing the first direction; and a mold film provided between the memory cells and having air gaps which separate the memory cells. The memory cell includes a lower electrode which is electrically connected to the word line and has a first width in the first direction, an upper electrode which is electrically connected to the bit line and has a second width larger than the first width in the first direction, and a phase change film which is provided between the lower electrode and the upper electrode and has the first width in the first direction.</p> |
