| 摘要 |
<p>In this ultraviolet semiconductor light emitting element, a laminated film on one side of a substrate has a mesa structure, said laminated film configured from an n-type layer, a light emitting layer, and a p-type layer. Furthermore, the ultraviolet semiconductor light emitting element is provided with an n electrode that is provided on the exposed surface of the n-type layer, said exposed surface being on the one side of the substrate, and a p electrode that is provided on a p-type layer surface on the one side of the substrate. In the ultraviolet semiconductor light emitting element, the p electrode is formed to planarly cover the p-type layer. Furthermore, in the ultraviolet semiconductor light emitting element, a high-resistance layer having resistance higher than that of the p-type layer or that of the p electrode is formed in a shape along the n electrode shape on the p-type layer side, said high-resistance layer being on the p-type layer surface on the side close to the n electrode.</p> |
