发明名称 |
METHOD OF ETCHING COPPER LAYER, AND MASK |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of etching a copper layer of a workpiece.SOLUTION: A mask having a pattern to be transferred to a copper layer is disposed on the copper layer. A method of etching the copper layer includes a step (a) of etching the copper layer by using plasma of a first gas containing hydrogen gas, and a step (b) of processing the workpiece by using plasma of a second gas containing hydrogen gas and a gas sedimentary to the workpiece. The step (a) of etching the copper layer by using plasma of the first gas, and the step (b) of processing the workpiece by using plasma of the second gas are repeated alternately.</p> |
申请公布号 |
JP2014086500(A) |
申请公布日期 |
2014.05.12 |
申请号 |
JP20120232968 |
申请日期 |
2012.10.22 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
NISHIMURA EIICHI ; KUSHIBIKI MASATO ; SONE TAKASHI ; SHIMIZU AKITAKA ; YAMASHITA FUMIKO |
分类号 |
H01L21/3065;H01L21/3205;H01L21/3213;H01L21/768;H01L23/532 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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