SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

Disclosed are a semiconductor device and a fabrication method thereof. A gate stack is formed on a substrate. A recess cavity is formed on a substrate adjacent to the gate stack. A first Epi material is formed in the recess cavity. A second Epi material is formed on the first Epi material. A part of a second Epi material is removed by a removal process. The disclosed method provides the second Epi material to reinforce the carrier′s movement and to upgrade the performance of the device. Thereby, an improved method and a removal process to form a strain feature are provided.