发明名称 BRAZING MATERIAL, BRAZING MATERIAL PASTE, CERAMIC CIRCUIT SUBSTRATE, CERAMIC MASTER CIRCUIT SUBSTRATE, AND POWER SEMICONDUCTOR MODULE
摘要 To provide a brazing material for maintaining bonding strength between ceramic substrate and metal plate at a conventionally attainable level, while addition amount of In is reduced, and a brazing material paste using the same. A mixture powder provided by mixing alloy powder composed of Ag, In, and Cu, Ag powder, and active metal hydride powder, the mixture powder containing active metal hydride powder with a 10-to-25-μm equivalent circle average particle diameter by 0.5 to 5.0 mass %, the equivalent circle average particle diameters for the alloy powder, Ag powder, and active metal hydride powder having a relationship: alloy powder≧active metal hydride powder>Ag powder, and the powder mixture having a particle size distribution of d10 of 3 to 10μm, d50 of 10 to 35μm, and d90 of 30 to 50μm, and in the frequency distribution, a peak of the distribution existing between d50 and d90.
申请公布号 US2014126155(A1) 申请公布日期 2014.05.08
申请号 US201214127476 申请日期 2012.07.02
申请人 IMAMURA HISAYUKI;FUJITA SUGURU;WATANABE JUNICHI;HITACHI METALS, LTD. 发明人 IMAMURA HISAYUKI;FUJITA SUGURU;WATANABE JUNICHI
分类号 H01L23/34;B23K35/30 主分类号 H01L23/34
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