SEMICONDUCTOR DEVICE

摘要

A MOSFET which is a semiconductor device capable of achieving a stable reverse breakdown voltage and reduced on-resistance includes a SiC wafer of an n conductivity type, a plurality of p bodies (21) of a p conductivity type formed to include a first main surface (20A) of the SiC wafer, and n + source regions (22) of the n conductivity type formed in regions surrounded by the plurality of p bodies (21), respectively, when viewed two-dimensionally. Each of the p bodies (21) has a circular shape when viewed two-dimensionally, and each of the n + source regions (22) is arranged concentrically with each of the p bodies (21) and has a circular shape when viewed two-dimensionally. Each of the plurality of p bodies (21) is arranged to be positioned at a vertex of a regular hexagon when viewed two-dimensionally.