| 摘要 |
The present invention relates to a method and a device for crystallizing amorphous semiconductor thin film. More particularly, the present invention relates to a method and a device for crystallizing amorphous semiconductor thin film by heat treatment by plasma ion insertion. The crystallizing method of amorphous semiconductor thin film of the present invention comprises the following steps: forming a metal layer on the upper part of the amorphous semiconductor thin film; producing plasma using gas; forming an electric field for speeding up the insertion of plasma ion or electron toward the metal layer; directly heating the metal layer with kinetic energy of the inserted ion or electron inserted into the metal layer by the electric field; and indirectly heating the amorphous semiconductor thin film by the heated metal layer. The present invention speeds up the insertion of ion to the whole surface of amorphous semiconductor thin film to heat or cool, so the crystallization of amorphous semiconductor thin film can be evenly performed than the crystallization of the thin film with a conventional laser annealing method or a device. Also, large area amorphous thin film is simultaneously heated or cooled, thus, the processing time can be drastically reduced compared with the crystallization of the thin film with the conventional laser annealing method or a device, thereby improving the productivity. |
