| 摘要 |
A flash memory apparatus includes: a cell array including a plurality of main blocks, a code addressable memory (CAM) block, and a security block; a control unit configured to detect a threshold voltage change data of a main block to which a program operation has been performed among the plurality of main blocks, and set a trimming value corresponding to the detected threshold voltage change data; and a read voltage generation unit configured to generate a read voltage according to the set trimming value. |
