发明名称 |
Semiconductor overlapped PN structure and manufacturing method thereof |
摘要 |
The present invention discloses a semiconductor overlapped PN structure and manufacturing method thereof. The method includes: providing a substrate; providing a first mask to define a P (or N) type well and at least one overlapped region in the substrate; implanting P (or N) type impurities into the P (or N) type well and the at least one overlapped region; providing a second mask having at least one opening to define an N (or P) type well in the substrate, and to define at least one dual-implanted region in the at least one overlapped region; implanting N (or P) type impurities into the N (or P) type well and the at least one dual-implanted region such that the at least one dual-implanted region has P type and N type impurities. |
申请公布号 |
US8710633(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US201313864196 |
申请日期 |
2013.04.16 |
申请人 |
HUANG TSUNG-YI;HUANG CHIEN-HAO;LIN YING-SHIOU;RICHTEK TECHNOLOGY CORPORATION |
发明人 |
HUANG TSUNG-YI;HUANG CHIEN-HAO;LIN YING-SHIOU |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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