| 摘要 |
PROBLEM TO BE SOLVED: To provide a detection device in which image artifacts are suppressed by reducing mixing of an organic material from an interlayer insulating layer in a region outside a pixel array into an impurity semiconductor layer and a semiconductor layer of a conversion element.SOLUTION: A method of manufacturing a detection device having a plurality of conversion elements 11, each of which includes an electrode 122 electrically connected to a switch element 12 and a semiconductor layer 124 disposed on the electrode 122, performs: a first step of forming a plurality of electrodes 122 on a first region of the surface of an interlayer insulating layer 120 which is formed so as to cover a plurality of switch elements 12 and is made of an organic material, and forming a coating layer 150 made of an inorganic material on a second region located outside the first region of the surface; and a second step of forming the semiconductor layer 124 on the electrodes 122 after the first step. |
