| 摘要 |
A disclosed method of depositing a silicon film on a substrate mounted on a turntable and can pass by rotation through a first process area and a second process area, which are separately arranged along a peripheral direction in a cylindrical chamber set to have a first temperature capable of cutting a Si—H bond includes a molecular layer deposition step of supplying a Si2H6 gas set to have a second temperature less than the first temperature when the substrate passes through the first process area thereby forming a SiH3 molecular layer on a surface of the substrate, and a hydrogen desorption step of causing the substrate, on a surface of which the SiH3 molecular layer is formed, to pass through the second process area maintained to have the first temperature thereby cutting the Si—H bond and leaving only a silicon atomic layer on the surface of the substrate. |
