NITRIDE SEMICONDUCTOR AND FABRICATING METHOD THEREOF

摘要

The present invention relates to a nitride semiconductor and a fabricating method thereof. A nitride semiconductor according to an embodiment of the present invention includes a first electrode and a second electrode of a nitride base which are arranged on a substrate to be separated from each other with a distance, a channel layer of a nitride base which connects the first electrode and the second electrode, an insulating layer which surrounds the channel layer, and a third electrode which surrounds the insulating layer on the insulating layer.