| 摘要 |
PROBLEM TO BE SOLVED: To provide a pressure-contact type semiconductor device that prevents trouble due to component shifting by suppressing a gap from being formed in the pressure-contact type semiconductor device, and a method of manufacturing the pressure-contact type semiconductor device.SOLUTION: A pressure-contact type semiconductor device includes: a semiconductor substrate 10 which has an upper surface 10a and a lower surface 10b on the opposite side from the upper surface and in which a current flows between the upper surface and lower surface; a main body part 16A which is electrically connected to the upper surface while facing the upper surface; a first electrode 16 which has a plurality of projection parts 16a, 16b formed extending radially from the main body part toward side faces of the main body part; a second electrode 44 which is electrically connected to the lower surface while facing the lower surface; an insulation cylinder 70 which covers the projection parts and semiconductor substrate while exposing an upper surface of the main body part and a lower surface of the second electrode to the outside; and projection parts 70a, 70b for fixation which are provided on an inner wall of the insulation cylinder 70, and come into contact with the projection parts to suppress the first electrode from moving away from the semiconductor substrate. |
