发明名称 FILM FORMATION METHOD AND FILM FORMATION DEVICE
摘要 Provided are a film formation method and a film formation device with which oxidation of the film during film formation can be limited, the device can be configured simply and inexpensively, and the substrate on which the film is to be formed can be exchanged without costing labor or time. The film formation device (100) for forming films by accelerating a starting material powder (2) along with a gas and spraying and depositing said powder (2) still in the solid state on the surface of a substrate (1) is provided with: a chamber (10); a holder (11), which is provided inside the chamber (10) and is for holding the substrate (1); a spray nozzle (12) for spraying the powder (2) along with an inert gas; and a driving unit (15) for moving either the spray nozzle (12) or the holder (11) with respect to the other. The pressure inside the chamber (10) becomes positive as a result of the inert gas sprayed by the spray nozzle (12).
申请公布号 WO2014057951(A1) 申请公布日期 2014.04.17
申请号 WO2013JP77391 申请日期 2013.10.08
申请人 NHK SPRING CO., LTD. 发明人 HIRANO, SATOSHI
分类号 C23C24/04;B05B7/14;B05D1/12 主分类号 C23C24/04
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