发明名称 METHOD AND DEVICE FOR SLICING A SHAPED SILICON INGOT USING LAYER TRANSFER
摘要 A method for slicing a crystalline material ingot includes providing a crystalline material boule characterized by a cropped structure including a first end-face, a second end-face, and a length along an axis in a first crystallographic direction extending from the first end-face to the second end-face. The method also includes cutting the crystalline material boule substantially through a first crystallographic plane in parallel to the axis to separate the crystalline material boule into a first portion with a first surface and a second portion with a second surface. The first surface and the second surface are planar surfaces substantially along the first crystallographic plane. The method further includes exposing either the first surface of the first portion or the second surface of the second portion, and performing a layer transfer process to form a crystalline material sheet from either the first surface of the first portion or from the second surface of the second portion.
申请公布号 US2014106540(A1) 申请公布日期 2014.04.17
申请号 US201314106002 申请日期 2013.12.13
申请人 SILICON GENESIS CORPORATION 发明人 HENLEY FRANCOIS J.
分类号 H01L21/02 主分类号 H01L21/02
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