发明名称 |
VERTICAL NITRIDE-BASED LIGHT EMITTING DIODE HAVING OHMIC CONTACT PATTERN AND METHOD OF MANUFACTURING THE SAME |
摘要 |
Provided is a vertical nitride-based LED including a first electrode; a first nitride semiconductor layer that is disposed on the first electrode; an active layer that is disposed on the first nitride semiconductor layer; a second nitride semiconductor layer that is disposed on the active layer; an ohmic contact pattern that is disposed on the second nitride semiconductor layer; a second electrode that is disposed on the ohmic contact pattern; and a bonding pad that is electrically connected to the second electrode and disposed on the second nitride semiconductor layer. |
申请公布号 |
US2014106483(A1) |
申请公布日期 |
2014.04.17 |
申请号 |
US201314109420 |
申请日期 |
2013.12.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JIN BOCK;LEE JIN HYUN;PARK HEE SEOK;CHOI PUN JAE;YANG JONG IN |
分类号 |
H01L33/62 |
主分类号 |
H01L33/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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