发明名称 |
HEAT SHIELD STRUCTURE FOR SILICON INGOT GROWER |
摘要 |
The present invention relates to a heat shield structure for a silicon ingot grower, and more specifically, to a heat shield structure for a silicon ingot grower forming an interference prevention unit on the heat shield structure for securing a viewing angle of a camera, thereby allowing the growth of a large diameter ingot in a small diameter ingot grower. The present invention provides the heat shield structure for the silicon ingot grower including a camera on one side which shields heat toward a monocrystal ingot growing from a silicon solution inside a crucible, wherein the heat shield structure includes at least one interference prevention unit formed by penetrating toward a longitudinal direction for securing a measurement viewing angle of the camera. |
申请公布号 |
KR20140045236(A) |
申请公布日期 |
2014.04.16 |
申请号 |
KR20120111523 |
申请日期 |
2012.10.08 |
申请人 |
WOONGJIN ENERGY CO., LTD. |
发明人 |
KIM, KWANG HUN;SUNG, KUY JUN |
分类号 |
C30B15/00;C30B29/06;H01L21/02 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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