发明名称 HEAT SHIELD STRUCTURE FOR SILICON INGOT GROWER
摘要 The present invention relates to a heat shield structure for a silicon ingot grower, and more specifically, to a heat shield structure for a silicon ingot grower forming an interference prevention unit on the heat shield structure for securing a viewing angle of a camera, thereby allowing the growth of a large diameter ingot in a small diameter ingot grower. The present invention provides the heat shield structure for the silicon ingot grower including a camera on one side which shields heat toward a monocrystal ingot growing from a silicon solution inside a crucible, wherein the heat shield structure includes at least one interference prevention unit formed by penetrating toward a longitudinal direction for securing a measurement viewing angle of the camera.
申请公布号 KR20140045236(A) 申请公布日期 2014.04.16
申请号 KR20120111523 申请日期 2012.10.08
申请人 WOONGJIN ENERGY CO., LTD. 发明人 KIM, KWANG HUN;SUNG, KUY JUN
分类号 C30B15/00;C30B29/06;H01L21/02 主分类号 C30B15/00
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