发明名称 |
INTELLIGENT SHIFTING OF READ PASS VOLTAGES FOR NON-VOLATILE STORAGE |
摘要 |
A first read pass voltage is determined and optimized for cycled memory. One or more starting read pass voltages are determined for one or more dies. The system dynamically calculates a current read pass voltage based on the number of program/erase erase cycles, the first read pass voltage and the respective starting read pass voltage. Data is read from one or more non-volatile storage elements using the calculated current read pass voltage. |
申请公布号 |
EP2718934(A1) |
申请公布日期 |
2014.04.16 |
申请号 |
EP20120726555 |
申请日期 |
2012.05.31 |
申请人 |
SANDISK TECHNOLOGIES INC. |
发明人 |
YUAN, JIAHUI;DONG, YINGDA;KWONG, CHARLES |
分类号 |
G11C29/02;G11C11/56;G11C16/26;G11C16/34 |
主分类号 |
G11C29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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