| 摘要 |
According to one embodiment, a solid-state image sensing device includes a semiconductor substrate which includes a first surface and a second surface opposite to the first surface, a pixel which is provided in the semiconductor substrate and which photoelectrically converts light emitted via a lens on the second surface, a support substrate which is provided on a first insulating layer covering an element on the first surface and which includes a trench, and a first device which is provided on the first insulating layer and which is accommodated in the trench of the support substrate. |
