| 摘要 |
The invention relates to a process for deposition of polycrystalline silicon, comprising introduction of a reaction gas containing a silicon-containing component and hydrogen into a reactor, as a result of which polycrystalline silicon is deposited in the form of rods, which comprises passing into the reactor, after the deposition has ended, a gas which attacks silicon or silicon compounds which flows around the polycrystalline rods and an inner reactor wall in order to dissolve silicon-containing particles which are formed in the course of deposition and adhere on the inner reactor wall or on the polycrystalline silicon rods before the polycrystalline silicon rods are removed from the reactor. |
