发明名称 |
SEMICONDUCTOR DEVICE HAVING LOCALIZED CHARGE BALANCE STRUCTURE AND METHOD |
摘要 |
In one embodiment, a semiconductor device has a superjunction structure formed adjoining a low-doped n-type region. A low-doped p-type region is formed adjoining the superjunction structure above the low-doped n-type region and is configured to improve Eas characteristics. A body region is formed adjacent the low-doped p-type region and a control electrode structure is formed adjacent the body region for controlling a channel region within the body region. |
申请公布号 |
US2014097489(A1) |
申请公布日期 |
2014.04.10 |
申请号 |
US201314025587 |
申请日期 |
2013.09.12 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
ROIG-GUITART JAUME;MOENS PETER;VANMEERBEEK PIET |
分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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