ETCHING OF BLOCK-COPOLYMERS

摘要

The present invention relates to a method for block-copolymer lithography. This method includes a step (12) of obtaining a self-organization block-copolymer layer including at least two polymer elements of mutually different etch resistance, and a step of applying the first plasma etching (14) of the self-organization block-copolymer layer by using plasma actually generated from a delamination gas and the second plasma etching (14) of the self-organization block-copolymer layer by using plasma actually generated from an pure inactive gas or the mixture of an inactive gas to selectively remove the first polymer at least once. A corresponding intermediate product is also described. [Reference numerals] (12) Provide a BCP layer on a substrate; (14) Perform a first plasma etching using a delamination gas; (16) Perform a second plasma etching using an inactive gas or mixture thereof; (18) Provide a pre-mask on the substrate