发明名称 |
Nonvolatile data storage devices, program methods thereof, and memory systems including the same |
摘要 |
Provided are methods of programming a nonvolatile data storage device including memory blocks sharing a block word line. The methods may include selecting the memory blocks, and the selected memory blocks may include a first memory block that is to be programmed and a second memory block that is to be program-inhibited. The methods may also include applying a program voltage to a selected word line of the first memory block. The methods may further include applying a bipolar prohibition voltage to word lines of the second memory block. |
申请公布号 |
US8693248(B2) |
申请公布日期 |
2014.04.08 |
申请号 |
US20100981934 |
申请日期 |
2010.12.30 |
申请人 |
KWON OHSUK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON OHSUK |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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