发明名称 Nonvolatile data storage devices, program methods thereof, and memory systems including the same
摘要 Provided are methods of programming a nonvolatile data storage device including memory blocks sharing a block word line. The methods may include selecting the memory blocks, and the selected memory blocks may include a first memory block that is to be programmed and a second memory block that is to be program-inhibited. The methods may also include applying a program voltage to a selected word line of the first memory block. The methods may further include applying a bipolar prohibition voltage to word lines of the second memory block.
申请公布号 US8693248(B2) 申请公布日期 2014.04.08
申请号 US20100981934 申请日期 2010.12.30
申请人 KWON OHSUK;SAMSUNG ELECTRONICS CO., LTD. 发明人 KWON OHSUK
分类号 G11C11/34 主分类号 G11C11/34
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