| 摘要 |
In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (&bgr;f). At least some shots in the plurality of shots overlap other shots. In some embodiments, &bgr;f is reduced by controlling the amount of shot overlap in the plurality of shots, either during initial shot determination, or in a post-processing step. The reduced sensitivity to &bgr;f expands the process window for the charged particle beam lithography process. |
