| 发明名称 |
INTEGRATED CIRCUIT TRANSISTOR STRUCTURE WITH HIGH GERMANIUM CONCENTRATION SiGe STRESSOR |
| 摘要 |
An integrated circuit transistor structure includes a semiconductor substrate, a first SiGe layer in at least one of a source area or a drain area on the semiconductor substrate, and a channel between the source area and the drain area. The first SiGe layer has a Ge concentration of 50 percent or more. |
| 申请公布号 |
US2014091362(A1) |
申请公布日期 |
2014.04.03 |
| 申请号 |
US201314102702 |
申请日期 |
2013.12.11 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG CHIH-HAO;XU JEFF J.;WANG CHIEN-HSUN;YEH CHIH CHIEH;CHANG CHIH-HSIANG |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
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